Overcoming anomalous suppression of m-plane AlGaN growth by molecular-beam epitaxy using indium as a surfactant-Reference-Cited by-同舟云学术

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Overcoming anomalous suppression of m-plane AlGaN growth by molecular-beam epitaxy using indium as a surfactant

Published:2021-09-14 Issue:10 Volume:130 Page:105702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dzuba Brandon¹²,Nguyen Trang¹,Cao Yang¹,Diaz Rosa E.²,Manfra Michael J.¹²³⁴^ORCID,Malis Oana¹²^ORCID

Affiliation:

1. Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, USA

2. Birck Nanotechnology Center, West Lafayette, Indiana 47907, USA

3. School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA

4. School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, USA

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0058154

Reference31 articles.

1. Growth and applications of Group III-nitrides

2. Temperature dependence of the fundamental band gap of InN

3. III–nitrides: Growth, characterization, and properties

4. Terahertz intersubband transition in GaN/AlGaN step quantum well

5. Terahertz absorbing AlGaN/GaN multi-quantum-wells: Demonstration of a robust 4-layer design

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1. Peculiarities of Nucleation and Growth of InGaN Nanowires on SiC/Si Substrates by HVPE;Technical Physics Letters;2024-02

2. Transmission data rate improvement by InGaN barriers in GaN-based blue micro-LEDs for visible light communication;Optics Letters;2022-08-15

3. Novel nitride quantum structures for infrared sensing;Quantum Sensing and Nano Electronics and Photonics XVIII;2022-03-05

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