Terahertz absorbing AlGaN/GaN multi-quantum-wells: Demonstration of a robust 4-layer design
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4819950
Reference19 articles.
1. Active region design of a terahertz GaN/ Al0.15Ga0.85N quantum cascade laser
2. Optically pumped terahertz laser based on intersubband transitions in a GaN∕AlGaN double quantum well
3. Monte Carlo simulation of terahertz quantum cascade laser structures based on wide-bandgap semiconductors
4. Design and fabrication of terahertz quantum cascade laser structure based on III-nitride semiconductors
5. Terahertz dual-wavelength quantum cascade laser based on GaN active region
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4. Overcoming anomalous suppression of m-plane AlGaN growth by molecular-beam epitaxy using indium as a surfactant;Journal of Applied Physics;2021-09-14
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