Affiliation:
1. Fudan University
2. GuSu Laboratory of Materials
3. Songshan Lake Materials Laboratory
4. Dongguan Institute of Opto-electronics Peking University
5. Peking University
Abstract
A GaN-based blue micro-light-emitting diode (µ-LED) array using InGaN as barriers for In0.18Ga0.82N/In0.015Ga0.985N multiple quantum wells (MQWs) is fabricated. Compared with a conventional device using GaN as barriers, the light output power (8.8 mW) exhibits an enhancement of two times. In addition, an increased transmission data rate up to 1.50 Gbps is demonstrated in a visible light communication protype. These prominent improvements are believed to relate to the suppressed quantum-confined Stark effect and the decreased defect/dislocation density in MQWs using InGaN barriers, both of which allow for higher luminescence efficiency and optical power. Consequently, the resultant higher signal-to-noise ratio in the data transmission process leads to an enhanced data rate.
Funder
National Key Research and Development Program of China
Beijing Municipal Natural Science Foundation
Beijing Outstanding Young Scientist Program
National Natural Science Foundation of China
Key-Area Research and Development Program of Guangdong Province
Subject
Atomic and Molecular Physics, and Optics
Cited by
1 articles.
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