Improved properties of high-Al-composition AlGaN/GaN high electron mobility transistor structures with thin GaN cap layers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/53/i=9/a=095504/pdf
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1. AlGaN/GaN HEMTs grown on SiC substrates
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1. Strategy for reliable growth of thin GaN Caps on AlGaN HEMT structures;Journal of Crystal Growth;2023-12
2. Crack-Free High-Composition (>35%) Thick-Barrier (>30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (<250 Ω/□);Crystals;2023-09-30
3. Enhancement of two-dimensional electron gas mobility using strain reduced AlGaN barriers grown by metalorganic vapor phase epitaxy under nitrogen atmosphere;Japanese Journal of Applied Physics;2022-06-27
4. Low-sheet-resistance high-electron-mobility transistor structures with strain-controlled high-Al-composition AlGaN barrier grown by MOVPE;Journal of Crystal Growth;2021-04
5. Role of GaN cap layer for reference electrode free AlGaN/GaN-based pH sensors;Sensors and Actuators B: Chemical;2019-05
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