Author:
Yamada Atsushi,Yaita Junya,Nakamura Norikazu,Kotani Junji
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. T. Kikkawa, M. Nagahara, N. Okamoto, Y. Tateno, Y. Yamaguchi, N. Hara, K. Joshin, P.M. Asbeck, Surface-charge controlled AlGaN/GaN-power HFET without current collapse and gm dispersion, in: Int. Electron Devices Meet. Tech. Dig. (Cat. No.01CH37224), IEEE, 2001: pp. 25.4.1-25.4.4. https://doi.org/10.1109/IEDM.2001.979574.
2. Barrier Thickness Dependence of Electrical Properties and DC Device Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy;Higashiwaki;Jpn. J. Appl. Phys.,2004
3. AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz;Kumar;IEEE Electron Device Lett.,2002
4. Suppression of current collapse for millimeter-wave GaN-HEMTs;Yamada;Phys. Status Solidi Curr. Top. Solid State Phys.,2010
5. Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates;Deen;Appl. Phys. Lett.,2014
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献