Author:
Lau Wai Shing,Eng Chee Wee,Vigar David,Chan Lap,Siah Soh Yun
Abstract
AbstractOur observation is that both the on-current and off-current of state-of-the-art p-channel MOS transistors tend to become larger when the L-shaped spacer becomes smaller due to two different mechanisms: a decrease in the effective channel length Leff (Mechanism A) and a decrease in the series resistance (Mechanism B). In our analysis, we use drain induced barrier lowering (DIBL) as a measure of Leff and we assume that there is a linear relationship between the on-current, the logarithm of the off current and DIBL. Our assumption is supported by our theoretical derivations.
Publisher
Springer Science and Business Media LLC
Cited by
4 articles.
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