1. International Electron Devices Meeting, San Francisco, U.S.A., Dec. 10–13, 2000;Sayama,2000
2. High yielding self-aligned contact process for a 0.150-μm DRAM technology
3. A novel photodetector using MOS tunneling structures
4. IEEE International Semiconductor Manufacturing Symposium San Jose, U.S.A,Oct. 8–10 2001, IEEE, Piscataway, NJ;Huang,2001
5. International Electron Devices Meeting, San Francisco U.S.A., Dec. 10–13, 2000;Ito,2000