Switching from ⟨110⟩ to ⟨100⟩ orientation increases both the on current and off current of p-channel metal-oxide semiconductor transistors-Reference-Cited by-同舟云学术

Switching from ⟨110⟩ to ⟨100⟩ orientation increases both the on current and off current of p-channel metal-oxide semiconductor transistors

Published:2008-07-21 Issue:3 Volume:93 Page:033501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yang Peizhen,Lau W. S.,Ho V.,Lim B. K.,Siah S. Y.,Chan L.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2952494

Reference11 articles.

1. S. Saito, D. Hisamoto, Y. Kimura, N. Sugii, R. Tsuchiya, K. Torii, and S. Kimura, 2006 Symposium on VLSI Technology, Honolulu, Hawaii (IEEE, New York, 2006), 150.

2. W. S. Lau, C. W. Eng, D. Vigar, L. Chan, and S. Y. Siah, MRS Symposia Proceedings No. 913 (Materials Research Society, Warrendale, PA, 2006), p. 93.

3. A study of the linearity between Ion and logIoff of modern MOS transistors and its application to stress engineering

4. P. Yang, W. S. Lau, V. Ho, C. H. Loh, S. Y. Siah, and L. Chan, Proceedings of IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) (IEEE, New York, 2007), p. 99.

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3. Reduced boron lateral ion channeling in very short p-channel transistors by switching from ⟨110⟩ to ⟨100⟩ channel orientation;Applied Physics Letters;2008-12-08