Reduced boron lateral ion channeling in very short p-channel transistors by switching from ⟨110⟩ to ⟨100⟩ channel orientation-Reference-Cited by-同舟云学术

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Reduced boron lateral ion channeling in very short p-channel transistors by switching from ⟨110⟩ to ⟨100⟩ channel orientation

Published:2008-12-08 Issue:23 Volume:93 Page:233505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lau W. S.,Yang Peizhen,Ho V.,Lim B. K.,Siah S. Y.,Chan L.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3037205

Reference19 articles.

1. S. Saito, D. Hisamoto, Y. Kimura, N. Sugii, R. Tsuchiya, K. Torii, and S. Kimura, 2006 Symposium on VLSI Technology, Honolulu, Hawaii (IEEE, New York, 2006), p. 150.

2. Switching from ⟨110⟩ to ⟨100⟩ orientation increases both the on current and off current of p-channel metal-oxide semiconductor transistors

3. Leff extraction for sub-100 nm MOSFET devices

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atom probe tomographic assessment of the distribution of germanium atoms implanted in a silicon matrix through nano-apertures;Nanotechnology;2017-08-31

2. Physics of electron mobility independent of channel orientation in n-channel transistors based on (100) silicon wafers and its experimental verification;Applied Physics Letters;2010-09-27

3. Effects of switching from 〈110〉 to 〈100〉 channel orientation and tensile stress on n-channel and p-channel metal–oxide-semiconductor transistors;Solid-State Electronics;2010-04

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