Author:
Eyben P.,Duhayon N.,Stuer C.,Wolf I. De,Rooyackers R.,Clarysse T.,Vandervorst W.,Badenes G.
Abstract
ABSTRACTInitial studies (using Scanning Spreading Resistance Microscopy) on the lateral diffusion of B and As have shown an important influence of the thickness of oxy/nitride spacers. The latter phenomenon was tentatively ascribed to stress enhanced diffusion under the spacer region [1]. These studies have been complemented with Scanning Capacitance Microscopy (SCM) measurements, which confirm the SSRM-data. In fact both techniques shows a similar increase in lateral diffusion with increasing spacer thickness (∼ 0.2 nm/nm spacer thickness), whereby no effect is observed on the vertical diffusion. When using spacers with or without TEOS-liner, fairly similar enhancements could be seen. Micro-Raman and CBED stress measurements for these cases do however show a large reduction in stress when a TEOS-liner is used, suggesting that the correlation (at least to the final) stress is not really justified. A possible explanation could however be that the lateral diffusion occurs before the stress relaxation within the thermal treatment. In order to elucidate the diffusion mechanism (initial stress, interstitials, hydrogen incorporation, TED,..) we have expandedthe experimental matrix with a vacancy diffuser such as Sb and simulated the potential H-incorporation duringthe nitride deposition by a hydrogen anneal. Moreover we also have studied the impact of TED by splits with RTP-anneals before the nitride deposition.
Publisher
Springer Science and Business Media LLC
Reference6 articles.
1. One- and two-dimensional carrier profiling in semiconductors by nanospreading resistance profiling
2. SSRM and SCM observation of enhanced lateral Asand BF2-diffusion induced by nitride spacers;Eyben;Proceedings Material Research Society (MRS) Spring 2000,2000
3. [6] Armigliato A. , Balboni R. , Wolf I. De , Frabboni S. , Janssens K.G.F. and Vanhellemont J. , “Determination of lattice strain in local isolation structures by electron diffraction techniques and micro-Raman spectroscopy”,Inst. Phys. Conf. Ser. No 134:section 5, april 1993.
4. Scanning spreading resistance microscopy and spectroscopy for routine and quantitative two-dimensional carrier profiling
5. Lateral dopant profiling on a 100 nm scale by scanning capacitance microscopy
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