Effect of tensile stress on the various components of the off current of n-channel metal-oxide-semiconductor transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2769960
Reference11 articles.
1. Mobility enhancement
2. Effect of Spacer Scaling on PMOS Transistors
3. Y. Taur and T. Ning Fundamentals of Modern VLSI Devices, 1st ed. (Cambridge University Press, New York, 1998), p. 128.
4. Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits
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