Efficiency-droop reduction in blue InGaN light-emitting diodes with low temperature p-type insertion layer-Reference-Cited by-同舟云学术

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Efficiency-droop reduction in blue InGaN light-emitting diodes with low temperature p-type insertion layer

Published:2014-09 Issue: Volume:73 Page:145-151
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Zhang Jun,Zhuo Xiang-Jing,Li Dan-Wei,Ren Zhi-Wei,Yi Han-Xiang,Tong Jin-Hui,Wang Xing-Fu,Chen Xin,Zhao Bi-Jun,Li Shu-Ti

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference30 articles.

1. Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well

2. Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect

3. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

4. Investigation of large Stark shifts in InGaN/GaN multiple quantum wells

5. Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes

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1. Strong evidence for diffusion of point defects in GaInN/GaN quantum well structures;AIP Advances;2024-04-01

2. Performance improvement of InGaN LEDs by using strain compensated last quantum barrier and electron blocking layer;Optik;2021-12

3. Improved performance of InGaN/GaN MQW LEDs with trapezoidal wells and gradually thinned barrier layers towards anode;Optics Communications;2017-10

4. “W-shaped” injection current dependence of electroluminescence linewidth in green InGaN/GaN-based LED grown on silicon substrate;Optics Express;2017-08-23

5. Enhancing the Hole-Injection Efficiency of a Light-Emitting Diode by Increasing Mg Doping in the p-AlGaN Electron-Blocking Layer;IEEE Transactions on Electron Devices;2017-08

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