Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3471804
Reference54 articles.
1. Polarization of III-nitride blue and ultraviolet light-emitting diodes
2. Growth of III-nitride photonic structures on large area silicon substrates
3. Simulation of InGaN Quantum Well Laser Performance Using Quaternary InAlGaN Alloy as Electronic Blocking Layer
4. Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures
5. Stable temperature characteristics of InGaN blue light emitting diodes using AlGaN/GaN/InGaN superlattices as electron blocking layer
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