Defect Microchemistry at the SiO2/Si Interface

Abstract

AbstractA dominant, intrinsic chemical reaction path in SiO2/Si systems is the decomposition reaction Si +SiO2 → 2 SiO. Controlled analytical studies have elucidated the microchemical and microstructural aspects of this process and revealed that nucleation of the reaction occurs at existing defect sites. At an earlier stage of reaction, the same decomposition chemistry leads to electricl activation of the defects, as seen in breakdown and hole trapping phenomena. By careful and systematic control of ambient conditions during annealing, it is shown that the evolution of electrically active defects follows the same decomposition chemistry as does the physical deterioration of an entire oxide layer. These aspects of defect chemical behavior suggest implications for both defect identification and defect control in thin SiO2 layers on Si.