Hole trapping in SiO2films annealed in low‐pressure oxygen atmosphere
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339702
Reference24 articles.
1. Threshold-voltage instability in MOSFET's due to channel hot-hole emission
2. Location of positive charges in SiO2films on Si generated by vuv photons, x rays, and high‐field stressing
3. Charges in metal‐oxide‐semiconductor samples of various technologies induced by60Co‐γ‐ and x‐ray quanta
4. Hole traps and trivalent silicon centers in metal/oxide/silicon devices
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