Electrical properties of vacuum annealed La2O3 thin films grown by E-beam evaporation

Author:

Kim Yongshik,Miyauchi Kunihiro,Ohmi Shun-ichiro,Tsutsui Kazuo,Iwai Hiroshi

Publisher

Elsevier BV

Subject

General Engineering

Reference64 articles.

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4. Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5A;Wu;IEEE EDL,2000

5. Advanced gate dielectric materials for sub-100nm CMOS;Iwai;IEDM Technol. Digit.,2002

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