Author:
Kim Yongshik,Miyauchi Kunihiro,Ohmi Shun-ichiro,Tsutsui Kazuo,Iwai Hiroshi
Reference64 articles.
1. High-k gate dielectrics: current status and materials properties considerations;Wilk;J. Appl. Phys.,2001
2. The International Technology Roadmap for Semiconductors, 2003, http://public.itrs.net.
3. High quality La2O3 and Al2O3 gate dielectrics with equivalent oxide thickness 5-10A;Chin;Symp. VLSI Technol. Digit.,2000
4. Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5A;Wu;IEEE EDL,2000
5. Advanced gate dielectric materials for sub-100nm CMOS;Iwai;IEDM Technol. Digit.,2002
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