Charges in metal‐oxide‐semiconductor samples of various technologies induced by60Co‐γ‐ and x‐ray quanta
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334763
Reference15 articles.
1. Charge Yield and Dose Effects in MOS Capacitors at 80 K
2. A Simple Model for Predicting Radiation Effects in MOS Devices
3. A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures
4. Electron Injection Studies of Radiation Induced Positive Charge in MOS Devices
5. Unified Model of Damage Annealing in CMOS, from Freeze-In to Transient Annealing
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Generation phenomena of localized interface states induced by irradiation and post‐irradiation annealing at the Si/SiO2interface;Journal of Applied Physics;1993-05
2. The distribution of radiation‐induced charged defects and neutral electron traps in SiO2, and the threshold voltage shift dependence on oxide thickness;Journal of Applied Physics;1990-03-15
3. The Effects of “Normal” Annealing Cycles during IGFET Fabrication on Initial and Radiation‐Induced Gate Insulator Defects;Journal of The Electrochemical Society;1989-12-01
4. Electronic Charge Transport in Thin SiO2 Films;The Physics and Technology of Amorphous SiO2;1988
5. Hole trapping in SiO2films annealed in low‐pressure oxygen atmosphere;Journal of Applied Physics;1987-08
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3