Dissociation of Si+ ion implanted and as-grown thin SiO2 layers during annealing in ultra-pure neutral ambient by emanation of SiO
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2436834
Reference31 articles.
1. High-Temperature SiO2Decomposition at the SiO2/Si Interface
2. Outdiffusion and Subsequent Desorption of Volatile SiO Molecules during Annealing of Thick SiO2Films in Vacuum
3. Oxidation‐enhanced or retarded diffusion and the growth or shrinkage of oxidation‐induced stacking faults in silicon
4. Annealing of surface states in polycrystalline‐silicon–gate capacitors
5. O interstitial generation and diffusion in high temperature annealed Si/SiO2/Si structures
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