Annealing of surface states in polycrystalline‐silicon–gate capacitors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.323662
Reference50 articles.
1. Silicon gate technology
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3. Accelerated Dielectric Breakdown of Silicon Dioxide Films
4. Improved Dielectric Reliability of SiO2 Films with Polycrystalline Silicon Electrodes
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