The work function difference of the MOS-system with aluminium field plates and polycrystalline silicon field plates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Physics and Technology of Semiconductor Devices;Grove,1967
2. Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structures
3. Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized Silicon
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