Analysis of interface workfunction and process-induced damage of reactive-plasma-deposited ITO/SiO2/Si stack-Reference-Cited by-同舟云学术

Analysis of interface workfunction and process-induced damage of reactive-plasma-deposited ITO/SiO2/Si stack

Published:2017-09 Issue:9 Volume:7 Page:095212
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Kamioka T.¹^ORCID,Hayashi Y.¹^ORCID,Isogai Y.¹,Nakamura K.²,Ohshita Y.¹

Affiliation:

1. Toyota Technological Institute, Nagoya, Aichi 468-8511, Japan

2. Meiji University, Kawasaki, Kanagawa 214-8571, Japan

Funder

New Energy and Industrial Technology Development Organization (NEDO)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4997495

Reference25 articles.

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2. Study on the ITO work function and hole injection barrier at the interface of ITO/a-Si:H(p) in amorphous/crystalline silicon heterojunction solar cells

3. Dependence of indium–tin–oxide work function on surface cleaning method as studied by ultraviolet and x-ray photoemission spectroscopies

4. Work function of indium tin oxide transparent conductor measured by photoelectron spectroscopy

5. The Influence of Hydrogenation and Oxygen Vacancies on Molybdenum Oxides Work Function and Gap States for Application in Organic Optoelectronics

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