Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation-Reference-Cited by-同舟云学术

Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation

Published:2018-09-28 Issue:12 Volume:124 Page:125309
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Damianos D.¹,Vitrant G.¹,Kaminski-Cachopo A.¹,Blanc-Pelissier D.²,Ghibaudo G.²,Lei M.³,Changala J.³,Bouchard A.¹,Mescot X.¹,Gri M.¹,Cristoloveanu S.¹,Ionica I.¹

Affiliation:

1. Univ. Grenoble Alpes, CNRS, Grenoble-INP, IMEP-LAHC, 38000 Grenoble, France

2. INL-UMR 5270, INSA de Lyon, 7 avenue Jean Capelle, 69621 Villeurbanne, France

3. FemtoMetrix, 1850 East Saint Andrew Place, Santa Ana, California 92705, USA

Funder

Région Auvergne-Rhône-Alpes

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5041062

Reference41 articles.

1. Interface traps andPbcenters in oxidized (100) silicon wafers

2. The silicon-silicon dioxide system: Its microstructure and imperfections

3. Silicon surface passivation by ultrathin Al2O3films synthesized by thermal and plasma atomic layer deposition

4. Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells

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