Interface traps andPbcenters in oxidized (100) silicon wafers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97611
Reference6 articles.
1. Electronic traps andPbcenters at the Si/SiO2interface: Band‐gap energy distribution
2. Characteristic electronic defects at the Si‐SiO2interface
3. ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers
4. Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers
5. Effect of bias on radiation‐induced paramagnetic defects at the silicon‐silicon dioxide interface
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