Characteristic electronic defects at the Si‐SiO2interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94420
Reference9 articles.
1. Measurement of interface defect states at oxidized silicon surfaces by constant‐capacitance DLTS
2. ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers
3. Theory of the electronic structure of the Si-SiO2interface
4. ESR studies of thermally oxidized silicon wafers
5. Measurement of semiconductor–insulator interface states by constant‐capacitance deep‐level transient spectroscopy
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