ESR studies of thermally oxidized silicon wafers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference9 articles.
1. Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I
2. Paramagnetic defects in silicon/silicon dioxide systems
3. ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers
4. The Physics of MOS Insulators;Poindexter,1980
5. The Physics of MOS Insulators;Johnson,1980
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2. Corona charging damage on thermal Si/SiO2 structures with nm-thick oxides revealed by electron spin resonance;Microelectronic Engineering;2004-04
3. Invasive nature of corona charging on thermal Si/SiO2 structures with nanometer-thick oxides revealed by electron spin resonance;Applied Physics Letters;2003-04-28
4. THERMAL OXIDATION OF SILICON AND Si-SiO2 INTERFACE MORPHOLOGY, STRUCTURE AND LOCALIZED STATES;Handbook of Surfaces and Interfaces of Materials;2001
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