Advanced Analysis of Silicon Insulator Interface Traps in MOSFET's with SiO2 and HfO2 as Gate Dielectrics

Abstract

In this paper and using the charge pumping method, it is shown that in state-of-the-art fully processed MOSFET's the Si-SiO2 interface traps have the same properties as those of the Pb0 center. The question as to whether these defects are Pb0 centers is discussed. Devices using HfO2 as gate dielectric are also studied. In spite of some differences, it is found that the traps at the Si-SiO2 interface in these devices have the same properties as those in state-of-the-art fully processed MOSFET's. These differences are discussed. Finally, a method for extracting the interface trap density from the slope of the charge pumping curves is proposed and applied to the two kinds of devices studied.