Comparing defect characterization techniques with non-radiative multiphonon charge trapping model-Reference-Cited by-同舟云学术

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Comparing defect characterization techniques with non-radiative multiphonon charge trapping model

Published:2012-07-26 Issue:3 Volume:11 Page:225-237
ISSN:1569-8025
Container-title:Journal of Computational Electronics
language:en
Short-container-title:J Comput Electron

Author:

Garetto Davide,Randriamihaja Yoann Mamy,Rideau Denis,Schmid Alexandre,Jaouen Hervé

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Modelling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s10825-012-0413-z.pdf

Reference44 articles.

1. Fleetwood, D., Pantelides, S., Schrimpf, R.: Defects in Microelectronic Materials and Devices. CRC Press, Boca Raton (2008)

2. Nicollian, E., Brews, J.: MOS - Metal Oxide Semiconductor - Physics and Technology (1982)

3. Ielmini, D., Spinelli, A., Lacaita, A., Modelli, A.: A statistical model for SILC in flash memories. IEEE Trans. Electron Devices 49(11), 1955–1961 (2002)

4. Futako, W., Mizuochi, N., Yamasaki, S.: In situ ESR observation of interface dangling bond formation processes during ultrathin SiO2 growth on Si(111). Phys. Rev. Lett. 92(10), 105505 (2004)

5. Nicklaw, C., Lu, Z., Fleetwood, D., Schrimpf, R., Pantelides, S.: The structure, properties, and dynamics of oxygen vacancies in amorphous SiO2. IEEE Trans. Nucl. Sci. 49(6), 2667–2673 (2002)

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