In situESR Observation of Interface Dangling Bond Formation Processes During UltrathinSiO2Growth On Si(111)
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.92.105505/fulltext
Reference22 articles.
1. Hyperfine interactions in cluster models of thePbdefect center
2. Structural relaxation ofPbdefects at the (111)Si/SiO2interface as a function of oxidation temperature: ThePb-generation–stress relationship
3. Electrical activity of interfacial paramagnetic defects in thermal (100)Si/SiO2
4. Electronic traps andPbcenters at the Si/SiO2interface: Band‐gap energy distribution
5. The silicon-silicon dioxide system: Its microstructure and imperfections
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