Tunable zero-field magnetoresistance responses in Si transistors: Origins and applications

Abstract

The near-zero-field magnetoresistance (NZFMR) response has proven to be a useful tool for studying atomic-scale, paramagnetic defects that are relevant to the reliability of semiconductor devices. The measurement is simple to make and, in some cases, simple to interpret. In other cases, more sophisticated modeling based on the stochastic Liouville equation (SLE) is needed to access valuable information from NZFMR results. It has been shown that hyperfine and dipolar coupling interactions at atomic-scale defects affect the NZFMR line shape, but experimental parameters related to the detection method of NZFMR can also affect the nature of the response. Here, we demonstrate four distinct NZFMR detection methods in Si MOSFETs, which all access identical Si/SiO2 interface defects. In all four cases, we show that the line shape of the response is tunable based on experimental parameters alone. Using SLE-based modeling, we verify that time constants connected to physical carrier capture rates at the defect sites lead to these NZFMR line shape changes. The results demonstrate a method to extract some atomic-scale information for the purpose of defect identification. They also have broader applications to the continued development of ultra-sensitive magnetometers based on NZFMR in semiconductors. Additionally, the NZFMR effect in common Si-based devices may provide an inexpensive and accessible platform that mimics similar radical pair mechanisms that have become increasingly important in various biology fields.