Effect of bias on radiation‐induced paramagnetic defects at the silicon‐silicon dioxide interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93583
Reference16 articles.
1. A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures
2. Defect Structure and Irradiation Behavior of Noncrystalline SiO2
3. Origin of Interface States and Oxide Charges Generated by Ionizing Radiation
4. The Current Understanding of Charges in the Thermally Oxidized Silicon Structure
5. A model of interface states and charges at the Si‐SiO2interface: Its predictions and comparison with experiments
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