Spin-dependent capture mechanism for magnetic field effects on interface recombination current in semiconductor devices

Abstract

Electrically detected magnetic resonance and near-zero field magnetoresistance are techniques that probe defect states at dielectric interfaces critical for metal–oxide–semiconductor (MOS) electronic devices such as the Si/SiO2 MOS field effect transistor (MOSFET). A comprehensive theory, adapted from the trap-assisted recombination theory of Shockley, Read, and Hall, is introduced to include the spin-dependent recombination effects that provide the mechanism for magnetic field sensitivity.