A new approach to electrically detected magnetic resonance: Spin-dependent transient spectroscopy

Abstract

Electrically detected magnetic resonance (EDMR) is arguably the most sensitive method available to study electrically active point defects in semiconductor devices. Most EDMR studies have utilized spin-dependent recombination current and, thus, require p–n junctions or a photoconductive structure. Some time ago, Chen and Lang proposed and demonstrated EDMR via spin-dependent deep level transient spectroscopy in metal–oxide–semiconductor capacitors. We report on a similar and significantly simpler technique: spin-dependent transient spectroscopy (SDTS). We show that the sensitivity of this technique is independent of the resonance field and frequency. Through capacitance–voltage analysis, combined with our SDTS results, this technique can (crudely) provide information about the density of states of defects with a broad distribution of energy levels. In addition, we show that SDTS can be readily adapted to near-zero-field magnetoresistance effect measurements.