Probing the Atomic-Scale Mechanisms of Time-Dependent Dielectric Breakdown in Si/SiO<sub>2</sub> MOSFETs (June 2022)-Reference-Cited by-同舟云学术

Probing the Atomic-Scale Mechanisms of Time-Dependent Dielectric Breakdown in Si/SiO₂ MOSFETs (June 2022)

Author:

Sharov Fedor V.¹^ORCID,Moxim Stephen J.¹^ORCID,Haase Gaddi S.²,Hughart David R.³,McKay Colin G.²,Lenahan Patrick M.¹

Affiliation:

1. Department of Engineering Science and Mechanics, Pennsylvania State University, State College, PA, USA

2. Microsystems and Engineering Science and Applications (MESA), Sandia National Laboratories, Albuquerque, NM, USA

3. Radiati on and Electrical Sciences and Center, Sandia National Laboratories, Albuquerque, NM, USA

Funder

Defense Threat Reduction Agency

Sandia National Laboratories

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Link

Reference38 articles.

2. surface recombination in semiconductors;fitzgerald;IEEE Transactions on Electron Devices,1968

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