Investigation of Tm2O3 As a Gate Dielectric for Ge MOS Devices-Reference-Cited by-同舟云学术

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Investigation of Tm2O3 As a Gate Dielectric for Ge MOS Devices

Published:2018-07-20 Issue:7 Volume:86 Page:67-73
ISSN:1938-6737
Container-title:ECS Transactions
language:en
Short-container-title:ECS Trans.

Author:

Žurauskaitė Laura^ORCID,Jones Leanne,Dhanak Vinod R.,Mitrovic Ivona Z.,Hellström Per-Erik^ORCID,Östling Mikael

Publisher

The Electrochemical Society

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural, morphological, and metal-oxide-semiconductor characteristics of thulium oxide passivation layer grown in nitrogen-oxygen-nitrogen ambient;Sustainable Materials and Technologies;2023-04

2. Innovative approach of growing thulium oxide passivation layer in nitrogen/oxygen/nitrogen ambient;Materials Letters;2022-09

3. Improvement on Ge/GeOx/Tm2O3/HfO2 Gate Performance by Forming Gas Anneal;ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC);2021-09-13

4. Enhancement of electrical performance of Ge-based metal-oxide-semiconductor capacitor via formation of trigonal-Sm2O3;Surfaces and Interfaces;2021-08

5. Formation and characterization of holmium oxide on germanium‐based metal‐oxide‐semiconductor capacitor;International Journal of Energy Research;2021-04-13

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