Effect of high temperature processing of Si/SiO2/Si structures on their response to x‐ray irradiation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110601
Reference11 articles.
1. High-Temperature SiO2Decomposition at the SiO2/Si Interface
2. Kinetics of high‐temperature thermal decomposition of SiO2 on Si(100)
3. Defect Microchemistry at the SiO2/Si Interface
4. Deuterium interactions with ion‐implanted SiO2layers in silicon
5. Comparative study of radiation‐induced electrical and spin active defects in buried SiO2layers
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1. High tolerance to total ionizing dose of Ω-shaped gate field-effect transistors;Applied Physics Letters;2006-05-29
2. X-ray irradiation effects in top contact, pentacene based field effect transistors for space related applications;Applied Physics Letters;2006-04-10
3. Mechanism of electron localization at edge-sharing units in amorphousSiO2;Physical Review B;2003-07-09
4. Chapter 11 Defects and radiation-induced charge-trapping phenomena in SiO2;New Insulators, Devices and Radiation Effects;1999
5. Chapter 2 A review of buried oxide structures and SOI technologies;New Insulators, Devices and Radiation Effects;1999
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