Comparative study of radiation‐induced electrical and spin active defects in buried SiO2layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352306
Reference22 articles.
1. Oxygen vacancy model for the E1′ center in SiO2
2. Paramagnetic trivalent silicon centers in gamma irradiated metal‐oxide‐silicon structures
3. Evidence that similar point defects cause 1/fnoise and radiation-induced-hole trapping in metal-oxide-semiconductor transistors
4. Positive Charges andE' Centers Formed by Vacuum Ultraviolet Radiation in SiO2Grown on Si
5. Mechanism of Radiation Damage in SiO2/Si Induced by vuv Photons
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