Low Dose Rate Effects in Silicon-Based Devices and Integrated Circuits: A Review-Reference-Cited by-同舟云学术

Low Dose Rate Effects in Silicon-Based Devices and Integrated Circuits: A Review

Published:2018-12 Issue:8 Volume:47 Page:539-552
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Tapero K. I.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063739718080127.pdf

Reference67 articles.

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3. Srour, J.R. and McGarrity, J.M., Radiation effects on microelectronics in space, Proc. IEEE, 1988, vol. 76, no. 11, pp. 1443–1469.

4. Tapero, K.I., Ulimov, V.N., and Chlenov, A.M., Radiatsionnye effekty v kremnievykh integral’nykh skhemakh kosmicheskogo primeneniya (Radiation Effects in Silicon Integrated Circuits for Space Application), Moscow: BINOM Labor. Znanii, 2012.

5. Tapero, K.I. and Didenko, S.I., Osnovy radiatsionnoi stoikosti izdelii elektronnoi tekhniki: radiatsionnye effekty v izdeliyakh elektronnoi tekhniki: Ucheb. Posobie (Fundamentals of Radiation Resistance of Electronic Products: Radiation Effects in Electronic Products, The School-Book), Moscow: MISiS, 2013.

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