Improved Soi Films By High Dose Oxygen Implantation and Lamp Annealing

Abstract

ABSTRACTIon beam synthesis of a buried SiO2 layer is an attractive silicon-on-insulator technology for high speed CMOS circuits and radiation hardened devices. We demonstrate here a new annealing procedure at 1405°C that produces silicon films of excellent quality, essentially free of oxygen precipitates and with sharp interfaces between the Si and the SiO2.