Author:
Mynard J.E.,Richmond C.J.,Knowler C.,Pasztor E.,Peart R.F.,Yao M.F.,Hemment P.L.F.,Stephens K.G.
Subject
Instrumentation,Nuclear and High Energy Physics
Reference5 articles.
1. C.S. Biddlecomb et al., PE2D User Guide, SERC Rutherford Appleton Laboratory Report RL-81-089.
2. Improved uniformity of implanted dose by a compensated scan pattern generator
3. E. Pasztor, private communication.
4. P. Crackwell, private communication.
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5 articles.
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1. On-line measurement of the spatial dose uniformity in ion implantation processes;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1988-06
2. High quality Si‐on‐SiO2films by large dose oxygen implantation and lamp annealing;Applied Physics Letters;1986-02-24
3. Silicon on insulator structures formed by the implantation of high doses of reactive ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1985-01
4. Improved facilities for ion beam surface analysis at the University of Surrey;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1985-01
5. Improved Soi Films By High Dose Oxygen Implantation and Lamp Annealing;MRS Proceedings;1985