Silicon on insulator structures formed by the implantation of high doses of reactive ions-Reference-Cited by-同舟云学术

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Silicon on insulator structures formed by the implantation of high doses of reactive ions

Published:1985-01 Issue:1-2 Volume:6 Page:292-297
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Hemment P.L.F.,Peart R.F.,Yao M.F.,Stephens K.G.,Arrowsmith R.P.,Chater R.J.,Kilner J.A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference22 articles.

1. K. Izumi, Y. Omura and S. Nakashima, Materials Research Society, Boston (November 1983).

2. H.W. Lam, Materials Research Society, Boston (November 1983).

3. Proc. 12th ESSDERC;Liu,1982

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4. A substrate heater with fast response for a low current ion-implanter;IEEE Transactions on Nuclear Science;1993-06

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