Properties of buried SiC layers produced by carbon ion implantation in (100) bulk silicon and silicon-on-sapphire-Reference-Cited by-同舟云学术

Properties of buried SiC layers produced by carbon ion implantation in (100) bulk silicon and silicon-on-sapphire

Published:1987-09 Issue:5 Volume:16 Page:315-321
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Golecki I.,Kroko L.,Glass H. L.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02657905.pdf

Reference20 articles.

1. For a recent compilation of studies, see Mat. Res. Soc. Symp. Proc. Vol.53 (1986).

2. Silicon Carbide—1968, Mater. Res. Bull.4, S369 (1969).

3. Y.S. Touloukian, Thermophysical Properties of High-Tem-perature Solid Materials, Vols. 4 and 5 (MacMillan Co.: New York, 1967); Y. S. Touloukian, R. K. Kirby, R. E. Taylor and T. Y. R. Lee, Thermophysical Properties of Matter, Vol. 13 (IFI/Plenum: New York, 1977).

4. D. M. Jackson, Jr. and R. W. Howard, Trans. Metall. Soc. AIME233, 468 (1965).

5. I. H. Khan and A. J. Learn, Appl. Phys. Lett.15, 410 (1969).

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