High Temperature Annealing of Simox Layers Physical Mechanisms of Oxygen Segregation-Reference-Cited by-同舟云学术

High Temperature Annealing of Simox Layers Physical Mechanisms of Oxygen Segregation

Published:1988 Issue: Volume:100 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Jaussaud C.,Margail J.,Stoemenos J.,Bruel M.

Abstract

ABSTRACTHigh temperature annealing of Simox wafers (T > 1300°C), has been proved to dramaticaly increase the quality of the SOI structure.The heat treatment leads to a redistribution of the implanted oxygen, opposite to its concentration profile, towards the buried layer.This paper describes from a thermodynamical point of view the SiO2 precipitates dissolution. The physical mechanisms of the oxygen migration are also discussed.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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5. Hydrogen in Crystalline Silicon

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