Ion beam synthesis of α and β FeSi2 layers-Reference-Cited by-同舟云学术

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Ion beam synthesis of α and β FeSi2 layers

Published:1993-04 Issue:1-2 Volume:74 Page:60-64
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Hunt Tim D.,Sealy Brian J.,Reeson Karen J.,Gwilliam Russell M.,Homewood Kevin P.,Wilson Richard J.,Meekison C.Douglas,Booker G.Roger

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference17 articles.

1. Ion‐beam synthesis of a Si/β‐FeSi2/Si heterostructure

2. Ion beam synthesis of buried α‐FeSi2and β‐FeSi2layers

3. Abinitioband‐structure calculation of the semiconductor β‐FeSi2

4. Electronic properties of semiconducting FeSi2films

5. Summary Abstract: Semiconducting silicides as potential materials for electro-optic very large scale integrated circuit interconnects

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Semiconducting beta-phase FeSi2 for light emitting diode applications: Recent developments, challenges, and solutions;Thin Solid Films;2013-06

2. Phase-Controlled Synthesis of Iron Silicide (Fe3Si and FeSi2) Nanoparticles in Solution;Chemistry of Materials;2010-04-07

3. Photoluminescence decay time and electroluminescence of p-Si∕β-FeSi2 particles∕n-Si and p-Si∕β-FeSi2 film∕n-Si double-heterostructures light-emitting diodes grown by molecular-beam epitaxy;Journal of Applied Physics;2007-06-15

4. Fabrication and mechanism of α-FeSi2 nanobars on (001) silicon wafer;Materials Letters;2005-03

5. Growth of Si∕β-FeSi2∕Si double-heterostructures on Si(111) substrates by molecular-beam epitaxy and photoluminescence using time-resolved measurements;Journal of Applied Physics;2004-09

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