Ion‐beam synthesis of a Si/β‐FeSi2/Si heterostructure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106235
Reference12 articles.
1. Optical properties of semiconducting iron disilicide thin films
2. Electronic properties of semiconducting FeSi2films
3. Abinitioband‐structure calculation of the semiconductor β‐FeSi2
4. Electronic structure of β-FeSi2
5. Semiconducting silicide‐silicon heterojunction elaboration by solid phase epitaxy
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1. In situ observation of heteroepitaxial β-FeSi2 during electron-beam irradiation;Thin Solid Films;2006-08
2. Grazing incident asymmetric X-ray diffraction of β-FeSi2 layers, produced by ion beam synthesis;Vacuum;2004-11
3. Room-temperature electroluminescence of ion-beam-synthesized β-FeSi2 precipitates in silicon;Applied Physics Letters;2003-07-28
4. High-resolution transmission electron microscopy study of interface structure and strain in epitaxial β-FeSi2 on Si (111) substrate;Journal of Crystal Growth;2003-07
5. Study about iron disilicide formation by high current ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-11
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