Growth of Si∕β-FeSi2∕Si double-heterostructures on Si(111) substrates by molecular-beam epitaxy and photoluminescence using time-resolved measurements
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1774246
Reference32 articles.
1. Optical properties of semiconducting iron disilicide thin films
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3. Electroluminescence of β-FeSi2Light Emitting Devices
4. Room-temperature electroluminescence of ion-beam-synthesized β-FeSi2 precipitates in silicon
5. Room Temperature 1.6 µm Electroluminescence from a Si-Based Light Emitting Diode with β-FeSi2 Active Region
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