Rapid Large Area Annealing of Ion-Implanted Si With Incoherent Light

Abstract

ABSTRACTWe report an extremely rapid and efficient method for annealing ion-implanted wafers by transient irradiation with tungsten halogen lamps. Several 3-inch wafers are held in an inert atmosphere, thermally isolated from the water cooled base and separated by a quartz plate from the air cooled lamps, which can deliver in excess of 100 kW of power. Heating of the wafers up to 1200°C, or even to the melting point of Si, occurs within seconds. The cooling process can be equally rapid. The temperature is continuously monitored with a pyrometer. The radiative flux in the chamber is uniform within 5% over at least 500 cm 2; however, at temperatures 1200 °C radiative losses at the wafer perimeter may cause crystalline slip if proper countermeasures are not taken.