Author:
Myers A. M.,Ruzic D. N.,Maley N.,Doyle J. R.,Abelson J. R.
Abstract
ABSTRACTDouble modulated beam mass spectrometry was used to obtain the first measurements of the identity, relative flux, and energy of film precursors in reactive dc magnetron sputtering. In these experiments, a 2″ diameter silicon target was sputtered in an argon plus deuterium plasma at an argon pressure of 1.5 mTorr. This system produces high quality a-Si:D. Energetic neutral Si and SiD were observed, while energetic neutral SiD2 and SiD3 were absent. The arrival rate of D in the form of SiD increased and then saturated at 19 percent of the total flux as the deuterium pressure was varied from 0 to 5 mTorr. The sputtered Si energy agreed qualitatively with the standard Thompson theory. Energetic ions located at mass 2 and 4 were measured with energies much greater than the sputtered Si. Thermal silane was also detected, raising the possibility that thermal silane radicals in addition to energetic Si and SiD contribute to film growth.
Publisher
Springer Science and Business Media LLC
Reference12 articles.
1. Sputtering by ion bombardment theoretical concepts
2. Investigation of the void structure in amorphous germanium thin films as a function of low‐energy ion bombardment
3. 9. Abelson J.R. , Doyle J.R. , Mandrell L. , Myers A.M. , and Maley N. , J. Vac. Sci .Technol. A., in press.
4. 7. Myers A.M. , Ruzic D.N. , Powell R.C. , Maley N. , Pratt D.W. , Greene J.E. , and Abelson J.R. , J. Vac. Sci. Technol. A. in press.
5. Glow discharge mass spectrometry of silicon DC sputtering in argon-hydrogen
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献