Single-Crystal Y2O3 Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition
Author:
Funder
Ministry of Science and Technology, Taiwan
Publisher
MDPI AG
Subject
General Materials Science
Link
http://www.mdpi.com/1996-1944/8/10/5364/pdf
Reference47 articles.
1. Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide Passivation
2. Initial growth of Ga2O3(Gd2O3) on GaAs: Key to the attainment of a low interfacial density of states
3. Heteroepitaxy of La2O3 and La2–xYxO3 on GaAs (111)A by Atomic Layer Deposition: Achieving Low Interface Trap Density
4. High ε gate dielectrics Gd2O3 and Y2O3 for silicon
5. Defect induced mobility enhancement: Gadolinium oxide (100) on Si(100)
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