Defect induced mobility enhancement: Gadolinium oxide (100) on Si(100)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4768295
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5. H. Osten, E. Bugiel, M. Czernohorsky, Z. Elassar, O. Kirfel, and A. Fissel,Rare Earth Oxide Thin Films: Growth, Characterization, and Applications, edited by M. Fanciulli and G. Scarel (Springer, Berlin, 2007), Vol. 106, pp. 101–114.
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1. Interfacial layer formation during the growth of Gd2O3 on Si(001) and its thermal stability;Semiconductor Science and Technology;2021-10-19
2. Epitaxy from a Periodic Y–O Monolayer: Growth of Single-Crystal Hexagonal YAlO3 Perovskite;Nanomaterials;2020-08-02
3. The electronic band structures of gadolinium chalcogenides: a first-principles prediction for neutron detecting;Journal of Physics: Condensed Matter;2016-04-06
4. Single-Crystal Y2O3 Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition;Materials;2015-10-19
5. Erratum: “Superior dielectric properties for template assisted grown (100) oriented Gd2O3 thin films on Si(100)” [Appl. Phys. Lett. 104, 012906 (2014)];Applied Physics Letters;2015-04-06
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