Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations-Reference-Cited by-同舟云学术

Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations

Published:2007-06-18 Issue:25 Volume:90 Page:252101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Badylevich M.,Shamuilia S.,Afanas’ev V. V.,Stesmans A.,Laha A.,Osten H. J.,Fissel A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2746419

Reference11 articles.

1. Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions

2. Correlations between electronic structure of transition metal atoms and performance of high-k gate dielectrics in advanced Si devices

3. High dielectric constant oxides

4. Recent advances in Schottky barrier concepts

5. Impact of Si substrate orientations on electrical properties of crystalline Gd2O3 thin films for high-K application

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